CTD6006-T52 datasheet, mosfet equivalent, CT Micro

Features and benefits

* Drain-Source Breakdown Voltage VDSS 60V
* Drain-Source On-Resistance RDS(ON) 20m, at VGS= 10V, ID= 20A RDS(ON) 24m, at VGS= 4.5V, ID= 10A
* Continuous Dra.

Application

* Super Low Gate Charge
* 100% EAS Guaranteed
* Green Device Available
* Excellent CdV/dt effect decline.

Description

The CTD6006-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are p.

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