* Drain-Source Breakdown Voltage VDSS 60 V
* Drain-Source On-Resistance RDS(ON) 4.15Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.7Ω, at VGS= 5.0V, IDS= 500mA ℃
* Conti.

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* Power management Description The CT2N7002E-R3 is the N-Channel logic enhancem.

The CT2N7002E-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Package Outline .

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