Datasheet4U Logo Datasheet4U.com

HPA650R650PC-G - Silicon N-Channel Power MOSFET

Description

HPA650R650PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.

Features

  • l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free 700 V 8 A 25 W 0.55 Ω 1.2 uJ.

📥 Download Datasheet

Datasheet Details

Part number HPA650R650PC-G
Manufacturer CR Micro
File Size 451.59 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HPA650R650PC-G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HPA650R600SA Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS
HPA650R1K1DN Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS
HPA650R1K3DN Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS
HPA650R1K9DN Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS
HPA650R2K8DN Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

Other Datasheets by CR Micro

Part Number Description
HPA650R099PF-G Silicon N-Channel Power MOSFET
HPA650R190PC-G Silicon N-Channel Power MOSFET
HPA650R300PC-G Silicon N-Channel Power MOSFET
HPA650R420PC-G Silicon N-Channel Power MOSFET
HPA600R120PC-G Silicon N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon N-Channel Power MOSFET ○R HPA650R650PC-G General Description： HPA650R650PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-220F, which accords with the RoHS standard. VDSS(Tjmax) ID PD(TC=25℃) RDS(ON)Typ Eoss@400V Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free 700 V 8 A 25 W 0.55 Ω 1.2 uJ Applications： Power switch circuit of adaptor and charger.
Published: |