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Silicon N-Channel Power MOSFET
○R
CS17N10 A4-G
General Description：
CS17N10 A4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching
VDSS ID PD RDS(ON)Typ
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-252, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤67 mΩ)
l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free
Applications：
Power switch circuit of adaptor and charger.
100 V 17 A 56.
CS17N10A4-G Datasheet
