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UGF09030 - 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

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UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation. • ALL GOLD metal system for highest reliability • Industry standard package • Suggested alternative to the MRF9030 • Internally matched for repeatable manufacturing • High gain, high efficiency and high linearity • Application Specific Performance, 870MHz GSM: 30 Watts 17.50dB EDGE: 13 Watts 17.50dB IS95 CDMA: 3.5 Watts 17.50 dB CDMA2000: TBD Watts 17.
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