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CPM3-1200-0075A - Silicon Carbide Power MOSFET

Key Features

  • High blocking voltage with low on-resistance.
  • High speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Easy to parallel and simple to drive.
  • Gold back metal Benefits.
  • Higher system efficiency.
  • Reduced cooling requirements.
  • Increased power density.
  • Increased system switching frequency.

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CPM3-1200-0075A Silicon Carbide Power MOSFET TM C3M MOSFET Technology Industry Leading Performance Features • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Easy to parallel and simple to drive • Gold back metal Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch Mode Power Supplies Inner Circuit VDS ID @ 25˚C RDS(on) 1200 V 30 A 75 mΩ (G) Gate (D) Drain (S) Source Part Number CPM3-1200-0075A Die Size (mm) Please contact your sales representative to get the detailed information about die layout and dimensions.