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C460UT190 - LED

General Description

P-N Junction Area (μm) Chip Top Area (μm) Chip Bottom Area (μm) Chip Thickness (μm) Au Bond Pad Diameter (μm) Bonding Area Note 5 Diameter (μm) Au Bond Pad Thickness (μm) Backside Contact Metal Area (μm) CxxxUT190-Sxxxx-31 Dimension Tolerance 160 x 160 ± 25 190 x 190 ± 25 150 x 150 ± 25 50

Key Features

  • Wavelengths for Blue, Green and White-conversion.
  • 50 mm Chip Thickness.
  • RF Performance:.
  • 450 nm.
  • 12+ mW.
  • 460 nm.
  • 10+ mW.
  • 470 nm.
  • 10+ mW.
  • 527 nm.
  • 4+ mW.
  • Low Forward Voltage.
  • 2.9 V Typical at 5 mA.
  • Conductive Adhesive Die Attach.
  • Single Wire Bond, Vertically Conductive Structure.
  • 2kV Class 2 ESD Rating CxxxUT190-Sxxxx-31 Chip Diagram.

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Full PDF Text Transcription for C460UT190 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for C460UT190. For precise diagrams, and layout, please refer to the original PDF.

Cree® UltraThin® UT190™ Gen 3 LEDs CxxxUT190-Sxxxx-31 Data Sheet (50 µm chip thickness) Cree’s UT190 LEDs combine highly efficient InGaN materials with Cree’s proprietary...

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LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small and thin with low forward voltage. Cree’s UT™ series chips are 100% tested for conformity to optical and electrical specifications, as well as the ability to withstand a 2000 V ESD pulse. Applications include consumer products, mobile devices and automotive applications where a small, thin form factor is required.

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