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C450UT190 - LED

Description

P-N Junction Area (μm) Chip Top Area (μm) Chip Bottom Area (μm) Chip Thickness (μm) Au Bond Pad Diameter (μm) Bonding Area Note 5 Diameter (μm) Au Bond Pad Thickness (μm) Backside Contact Metal Area (μm) CxxxUT190-Sxxxx-31 Dimension Tolerance 160 x 160 ± 25 190 x 190 ± 25 150 x 150 ± 25 50

Features

  • Wavelengths for Blue, Green and White-conversion.
  • 50 mm Chip Thickness.
  • RF Performance:.
  • 450 nm.
  • 12+ mW.
  • 460 nm.
  • 10+ mW.
  • 470 nm.
  • 10+ mW.
  • 527 nm.
  • 4+ mW.
  • Low Forward Voltage.
  • 2.9 V Typical at 5 mA.
  • Conductive Adhesive Die Attach.
  • Single Wire Bond, Vertically Conductive Structure.
  • 2kV Class 2 ESD Rating CxxxUT190-Sxxxx-31 Chip Diagram.

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Part Number Description
C450UT170 LED

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Cree® UltraThin® UT190™ Gen 3 LEDs CxxxUT190-Sxxxx-31 Data Sheet (50 µm chip thickness) Cree’s UT190 LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small and thin with low forward voltage. Cree’s UT™ series chips are 100% tested for conformity to optical and electrical specifications, as well as the ability to withstand a 2000 V ESD pulse. Applications include consumer products, mobile devices and automotive applications where a small, thin form factor is required.
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