C3M0120100K
C3M0120100K is Silicon Carbide Power MOSFET manufactured by Cree.
Features
Package
- C3MTM Si C MOSFET technology
- Optimized package with separate driver source pin
- 8mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- -
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, Ro HS pliant
Benefits
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching frequency Applications
- Renewable energy
- EV battery chargers
- High voltage DC/DC converters
- Switch Mode Power Supplies
Part Number C3M0120100K
Drain (Pin 1, TAB)
Gate (Pin 4)
Driver Source (Pin 3)
Power Source (Pin 2)
Package TO 247-4
Marking C3M0120100K
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax VGSmax VGSop
Drain
- Source Voltage Gate
- Source Voltage (dynamic) Gate
- Source Voltage (static)
Continuous Drain Current
1000 -8/+19 -4/+15
22 14
ID(pulse) Pulsed Drain...
