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C3M0120100K - Silicon Carbide Power MOSFET

CREE

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Datasheet Details

Part number	C3M0120100K
Manufacturer	CREE
File Size	923.37 KB
Description	Silicon Carbide Power MOSFET
Datasheet	C3M0120100K-CREE.pdf

C3M0120100K Product details

Features

Package.
C3MTM SiC MOSFET technology.
Optimized package with separate driver source pin.
8mm of creepage distance between drain and source.
High blocking voltage with low on-resistance.
High-speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
Reduce switching losses and minimize gate ringing.
Higher system efficiency.
R.

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Published: Mar 23, 2018 |