CRE8N80 mosfet equivalent, n-channel mosfet.
� RDS(ON) = 1.75 Ω@VGS = 10 V � Low gate charge ( typical 27nC) � High ruggedness � Fast switching capability � Avalanche energy specified � Improved dv/dt capability
such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
* Features
� RDS(ON) = 1.
The HX8N80(C) N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
* Features
� RDS(.
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