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SICD03C60 - 3A SiC Schottky Diode

Key Features

  • s.
  • Low Conduction and Switching Loss.
  • Positive Temperature Coefficient on Vf.
  • Temperature Independent Switching Behavior.
  • Fast Reverse Recovery.
  • High Surge Current Capability.
  • Pb-free lead plating.
  • Benefits.
  • Higher System Efficiency.
  • Parallel Device Convenience.
  • High Temperature.

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Datasheet Details

Part number SICD03C60
Manufacturer CITC
File Size 799.07 KB
Description 3A SiC Schottky Diode
Datasheet download datasheet SICD03C60 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SICD03C60 3A SiC Schottky Diode ■ Features • Low Conduction and Switching Loss • Positive Temperature Coefficient on Vf • Temperature Independent Switching Behavior • Fast Reverse Recovery • High Surge Current Capability • Pb-free lead plating ■ Benefits • Higher System Efficiency • Parallel Device Convenience • High Temperature Application • High Frequency Operation • Hard Switching & High Reliability • Environmental Protection ■ Outline ■ Applications • SMPS • PFC • Solar/Wind Renewable Energy • Power Inverters • Motor Drives Package TO-252-2L ■ Maximum ratings and electrical characteristics Parameter Conditions Symbol Marking code Peak Repetitive Reverse Voltage Peak Reverse Surge Voltage DC Blocking Voltage Continuous Forward Current Non-Repetitive Peak Forward surge current