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CS10L45CT-A Datasheet Preview

CS10L45CT-A Datasheet

MOS Schottky Rectifier

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Chip Integration Technology Corporation
CS10L45CT-A
10A MOS Schottky Rectifier
Main Product Characteristics
IF(AV)
VRRM
TJ
V(Typ)
2x5A
45V
150OC
0.36V
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Suffix "G" indicates Halogen-free part, ex.CS10L45CTG-A.
Lead free in compliance with EU RoHS.
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC TO-220AB molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified.
Outline
TO-220AB
ØP
A
F
B
C
Marking code
G
123
C
EH
I
D
K
L
M
JN
symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
ØP
Dimensions in inches(millimeters)
Min Max
0.398(10.1) 0.406(10.3)
0.236(6.0) 0.252(6.4)
0.579(14.7) 0.594(15.1)
0.543(13.8) 0.551(14.0)
0.143(3.63) 0.159(4.03)
0.104(2.64) 0.112(2.84)
0.335(8.5) 0.350(8.9)
0.046(1.17) 0.054(1.37)
0.028(0.71) 0.036(0.91)
0.098(2.49) 0.102(2.59)
0.176(4.47) 0.184(4.67)
0.046(1.17) 0.054(1.37)
0.102(2.6) 0.110(2.8)
0.019(0.28) 0.021(0.48)
0.147(3.74) 0.155(3.94)
ØP A
F
B
C
Marking code
G
123
EH
I
D
K
L
M
JN
Alternate
symbol Dimensions in inches(millimeters)
Min Max
A 0.394(10.0) 0.413(10.5)
B 0.228(5.8) 0.268(6.8)
C 0.570(14.48) 0.625(15.87)
D 0.519(13.18) 0.558(14.18)
E 0.089(3.5) 0.099(3.9)
F 0.100(2.54) 0.120(3.04)
G 0.330(8.38) 0.350(8.9)
H 0.045(1.15) 0.060(1.52)
I 0.029(0.75) 0.037(0.95)
J 0.095(2.42) 0.105(2.66)
K 0.160(4.07) 0.190(4.82)
L 0.045(1.15) 0.055(1.39)
M 0.080(2.04) 0.110(2.8)
N 0.013(0.33) 0.019(0.52)
ØP 0.148(3.75) 0.156(3.95)
PIN 1
PIN 3
PIN 2
Dimensions in inches and (millimeters)
Parameter
Working peak reverse voltage
Forward rectified current (total device)
Forward surge current (per diode)
Peak repetitive reverse surge current
(per diode)
Typical Thermal resistance (per dipde)
Storage temperature
Operating Junction temperature
Conditions
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
2us - 1kHz
Junction to case
Junction to ambient
Symbol
VRWM
IO
IFSM
IRRM
RθJC
RθJA
TSTG
TJ
CS10L45CT-A
45
10
200
2
2
50
-55 ~ +150
-55 ~ +150
UNIT
V
A
A
A
OC/W
OC/W
OC
OC
Parameter
Forward voltage drop (per diode)
Reverse current (per diode)
Reverse Breakdown Voltage (per diode)
Conditions
IF = 3A, TJ = 25OC
IF = 5A, TJ = 25OC
IF = 5A, TJ = 125OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
IR = 0.5mA, TJ = 25OC
1
Symbol MIN.
VF
IR
VBR 45
TYP.
370
360
MAX.
470
0.5
100
UNIT
mV
mA
V
Document ID : DS-11KB8
Revised Date : 2016/12/19
Revision : C8




CITC

CS10L45CT-A Datasheet Preview

CS10L45CT-A Datasheet

MOS Schottky Rectifier

No Preview Available !

Chip Integration Technology Corporation
CS10L45CT-A
10A MOS Schottky Rectifier
Rating and characteristic curves
Fig. 1 - Forward Characteristics
100
TA = 150oC
10
TA = 125oC
1 TA = 100oC
0.1
TA = 75oC
TA = 50oC
TA = 25oC
Fig. 2 - Reverse Characteristics
100
TA = 125oC
TA = 100oC
10
TA = 75oC
1
TA = 50oC
0.1 TA = 25oC
0.01
0
Per diode
200 400 600
Instantaneous Forward Voltage, VF (mV)
800
0.01
0
Per diode
10 20 30 40 50 60
Reverse Voltage, VR (V)
Fig. 3 - Forward Power Dissipation
9
8
7
6
5
4
3
2
1
0
0
Per diode
5 10 15
Average Forward Current, IF (A)
20
Fig. 4 - Forward Current Derating Curve
10
9
8
7
6
5
4
3
2
1
0
0
Per diode
25 50 75 100
Case Temperature, TC (oC)
125
150
10000
Fig. 5 - Junction Capacitance
1000
100
10
1
0
Per diode
5 10 15 20
Reverse Voltage, VR (V)
25
2
Document ID : DS-11KB8
Revised Date : 2016/12/19
Revision : C8


Part Number CS10L45CT-A
Description MOS Schottky Rectifier
Maker CITC
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