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CHT-NMOS8001 - N-Channel MOSFET

General Description

The CHT-NMOS8001 is a Medium Power 80V/1A N-channel power MOSFET’s designed to achieve high performance in an extremely wide temperature range: typical operation temperature goes from -55°C to 225°C.

The CHT-NMOS8001 is available in a tiny TDFP16 hermetically-sealed Ceramic SMD package.

Key Features

  • Specified from -55 to +225°C (Tj).
  • Drain voltage up to 80V.
  • Max DC drain current: 1A.
  • Maximum pulsed drain current: o 3A @ 225°C o 5.2A @ 25°C.
  • RDSon (typical): o 1.56Ω @ 225°C o 0.76 Ω @ 25°C.
  • VGS = -5.5V to +5.5V NC 1 NC 2 FB 3 FB 4 CEB 5 CEB 6 GND 7 GND 8 G SD VIN 16 NC.
  • Anti-series ESD diodes between gate 15 NC 14 VOUT 13 VOUT and source allow negative VGS voltage 12 VIN.
  • Available in tiny TDFP16 (5x5.5mm) 11 VIN 10 NC 9 NC hermetically-seal.

📥 Download Datasheet

Datasheet Details

Part number CHT-NMOS8001
Manufacturer CISSOID
File Size 514.89 KB
Description N-Channel MOSFET
Datasheet download datasheet CHT-NMOS8001 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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The Leader in High Temperature Semiconductor Solutions CHT-NMOS8001- DATASHEET Version: 1.2 High-Temperature, 80V / 1A N-Channel MOSFET General description The CHT-NMOS8001 is a Medium Power 80V/1A N-channel power MOSFET’s designed to achieve high performance in an extremely wide temperature range: typical operation temperature goes from -55°C to 225°C. The CHT-NMOS8001 is available in a tiny TDFP16 hermetically-sealed Ceramic SMD package. VIN Features  Specified from -55 to +225°C (Tj)  Drain voltage up to 80V  Max DC drain current: 1A  Maximum pulsed drain current: o 3A @ 225°C o 5.2A @ 25°C  RDSon (typical): o 1.56Ω @ 225°C o 0.76 Ω @ 25°C  VGS = -5.5V to +5.