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CHT-NEPTUNE - Silicon Carbide MOSFET

General Description

CHT-NEPTUNE is an High Temperature, High Voltage, Silicon Carbide MOSFET switch.

the metal case being electrically isolated from the switch terminals.

The product is guaranteed for normal operation on the full range -55°C to +225°C.

Key Features

  • a body diode that can be used as free-wheeling diode. This new version D (PLA8543D), replacing obsolete version C (PLA8543C), offers lower On Resistance with equivalent switching energies. Benefits.
  • High Temperature Operation.
  • Extended lifetime and high reliability.
  • Low Switching Energy enabling High Frequency Switching.
  • Pins electrically isolated from the case easing.

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Datasheet Details

Part number CHT-NEPTUNE
Manufacturer CISSOID
File Size 618.53 KB
Description Silicon Carbide MOSFET
Datasheet download datasheet CHT-NEPTUNE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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The Leader in High Temperature Semiconductor Solutions CHT-NEPTUNE PRELIMINARY DATASHEET Version: 4.0 High Temperature 1200V/10A, Silicon Carbide MOSFET General description CHT-NEPTUNE is an High Temperature, High Voltage, Silicon Carbide MOSFET switch. It is available in a metal TO-257 package – the metal case being electrically isolated from the switch terminals. The product is guaranteed for normal operation on the full range -55°C to +225°C. The device has a breakdown voltage in excess of 1200V and is capable of switching currents up to 10A at the maximum temperature (225°C). The device features a body diode that can be used as free-wheeling diode. This new version D (PLA8543D), replacing obsolete version C (PLA8543C), offers lower On Resistance with equivalent switching energies.