Datasheet4U Logo Datasheet4U.com

CHT-NEPTUNE-1210 - 1200V/10A Silicon Carbide MOSFET

Description

CHT-NEPTUNE-1210 is a High Temperature, High Voltage, Silicon Carbide MOSFET switch.

the metal case being electrically isolated from the switch terminals.

The product is guaranteed for normal operation on the full range -55°C to +225°C (Tj).

Features

  • a body diode that can be used as freewheeling diode. This new version D (PLA8543D), replacing obsolete version C (PLA8543C), offers lower On-Resistance with equivalent switching energies. Benefits.
  • High Temperature Operation.
  • Extended lifetime and high reliability.
  • Low Switching Energy enabling High Frequency Switching.
  • Pins electrically isolated from the case easing mechanical.

📥 Download Datasheet

Datasheet Details

Part number CHT-NEPTUNE-1210
Manufacturer CISSOID
File Size 882.04 KB
Description 1200V/10A Silicon Carbide MOSFET
Datasheet download datasheet CHT-NEPTUNE-1210 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CHT-100SF Coaxial SMA Female Terminations Component General
CHT-100SM (CHT-xxSM) Coaxial SMA Male Terminations Component General
CHT-15-2SF Coaxial SMA Female Terminations Component General
CHT-15-2SM (CHT-xxSM) Coaxial SMA Male Terminations Component General
CHT-150-1SF Coaxial SMA Female Terminations Component General

Other Datasheets by CISSOID

Part Number Description
CHT-NEPTUNE Silicon Carbide MOSFET
CHT-NMOS4005 40V N-channel Power MOSFET
CHT-NMOS4010 40V N-channel Power MOSFET
CHT-NMOS4020 40V N-channel Power MOSFET
CHT-NMOS8001 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
The Leader in High Temperature Semiconductor Solutions CHT-NEPTUNE-1210 PRELIMINARY DATASHEET Version: 4.4 (see note 1) High Temperature 1200V/10A Silicon Carbide MOSFET General description CHT-NEPTUNE-1210 is a High Temperature, High Voltage, Silicon Carbide MOSFET switch. It is available in a metal TO-257 package – the metal case being electrically isolated from the switch terminals. The product is guaranteed for normal operation on the full range -55°C to +225°C (Tj). The device has a breakdown voltage in excess of 1200V and is capable of switching currents up to 10A. The device features a body diode that can be used as freewheeling diode. This new version D (PLA8543D), replacing obsolete version C (PLA8543C), offers lower On-Resistance with equivalent switching energies.
Published: |