BCW30
BCW30 PNP Silicon Epitaxial Planar Transistor general purpose switching and amplification
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter DC Current Gain at -VCE = 5 V, -IC = 2 m A Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 1 m A Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 10 m A, -IB = 0.5 m A Base Emitter Voltage at -VCE = 5 V, -IC = 2 m A Transition Frequency at -VCE = 5 V, IE = 10 m A, f = 100 MHz Collector Base Capacitance at -VCB = 10 V, f = 1 MHz
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1.Base 2.Emitter 3.Collecto SOT-23 Plastic Package
Symbol
-VCBO -VCEO -VEBO
-IC -ICM Ptot Tj TS
Value 32 32 5 100 200 200 150
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