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CET

P20N06 Datasheet Preview

P20N06 Datasheet

CEP20N06

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CEP20N06/CEB20N06
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 28A, RDS(ON) = 40m@VGS = 10V.
RDS(ON) = 50m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
ID
IDM
28
20
112
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
50
0.4
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V
V
A
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice .
Symbol
RθJC
RθJA
1
Limit
3
50
Units
C/W
C/W
Rev 1. 2010.Dec
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CET

P20N06 Datasheet Preview

P20N06 Datasheet

CEP20N06

No Preview Available !

CEP20N06/CEB20N06
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Symbol
Test Condition
Min Typ Max Units
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
60
VGS = VDS, ID = 250µA
VGS = 10V, ID = 14A
VGS = 4.5V, ID = 10A
1
1
100
-100
V
µA
nA
nA
3V
30 40 m
35 50 m
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 30V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 4.4A,
VGS = 10V, RGEN = 1
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 30V, ID = 5.3A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 28A
750 pF
110 pF
70 pF
16 32
5 10
38 76
6 12
22.2 29
32
4.7
ns
ns
ns
ns
nC
nC
nC
28 A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
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Part Number P20N06
Description CEP20N06
Maker CET
PDF Download

P20N06 Datasheet PDF






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