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CEU6601 Datasheet Preview

CEU6601 Datasheet

P-Channel MOSFET

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CED6601/CEU6601
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -16A, RDS(ON) = 86m@VGS = -10V.
RDS(ON) = 125m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
-60
±20
-16
-64
42
0.33
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2006.Oct
http://www.cetsemi.com




CET

CEU6601 Datasheet Preview

CEU6601 Datasheet

P-Channel MOSFET

No Preview Available !

CED6601/CEU6601
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -8A
VGS = -4.5V, ID = -6A
Forward Transconductance
gFS VDS = -10V, ID = -15A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = -30V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -30V, ID = -1A,
VGS = -10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -30V, ID = -3.5A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = -1.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
-60
-1
Typ Max Units
-1
100
-100
V
µA
nA
nA
-3 V
70 86 m
95 125 m
10
1130
120
70
S
pF
pF
pF
15 30
8 16
69 138
20 40
19.2 25.5
3.2
4
ns
ns
ns
ns
nC
nC
nC
-16 A
-1.2 V
6
2


Part Number CEU6601
Description P-Channel MOSFET
Maker CET
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