CEU6426 Datasheet | CET

FEATURES 60V, 16A , RDS(ON) = 66mΩ @VGS = 10V. RDS(ON) = 85mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM ±20 16 64 32 0.26 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.9 50 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice . Rev 2. 2007.April http://.cet-mos. CED6426/CEU6426 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Symbol Test Condition Min Typ Max Units BVDSS IDSS IGSSF...