CEU62A2 Datasheet | CET

FEATURES 20V, 48A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 17mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) S CED SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20 Units V V A A W W/ C C ±12 48 140 48 0.38 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.6 50 Units C/W C/W Specification and data are subject to change without notice . 1 Rev 1. 2006.January http://.cetsemi. CED62A2/CEU62A2 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forwand Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 45A VDS = 20V, ID = 18A, VGS = 5V VDD = 10V, ID = 18A, VGS = 5V, RGEN = 3.3Ω 17 12 55 30 35 4 12 45 1.3 35 25 110 60 45 ns ns ns ns n C n C n C A V VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 4.5V, ID = 18A VGS = 2.5V, ID = 9A VDS = 5V, ID = 18A VDS = 20V, VGS = 0V, f = 1.0 MHz 0.5 10 13 10 2600 430 310 1.2 12 17 V mΩ mΩ S p F p F p F BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS...