900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CET

CEU6060R Datasheet Preview

CEU6060R Datasheet

N-Channel MOSFET

No Preview Available !

CED6060R/CEU6060R
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 30A, RDS(ON) = 25m@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 30
IDM 120
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
50
0.34
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
200
30
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3
50
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Specification and data are subject to change without notice .
1
Rev 2. 2007.July
http://www.cetsemi.com




CET

CEU6060R Datasheet Preview

CEU6060R Datasheet

N-Channel MOSFET

No Preview Available !

CED6060R/CEU6060R
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 24A
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 24A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 30A,
VGS = 10V, RGEN = 7.5
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 48V, ID = 30A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 24A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 25µH, IAS = 30A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C
Min
60
2
Typ
19
1365
385
90
18
16
34
21
39.5
10.4
14.9
Max Units
25
100
-100
V
µA
nA
nA
4V
25 m
S
pF
pF
pF
36 ns
32 ns
68 ns
42 ns
52.5 nC
nC
nC
30 A
1.3 V
6
2


Part Number CEU6060R
Description N-Channel MOSFET
Maker CET
PDF Download

CEU6060R Datasheet PDF






Similar Datasheet

1 CEU6060N N-Channel MOSFET
CET
2 CEU6060R N-Channel MOSFET
CET





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy