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CET

CEU6060N Datasheet Preview

CEU6060N Datasheet

N-Channel MOSFET

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CED6060N/CEU6060N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 34A, RDS(ON) = 25m@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
60
±20
34
136
62.5
0.42
Operating and Store Temperature Range
TJ,Tstg
-65 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.4
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2008.Sep.
http://www.cetsemi.com




CET

CEU6060N Datasheet Preview

CEU6060N Datasheet

N-Channel MOSFET

No Preview Available !

CED6060N/CEU6060N
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Symbol
Test Condition
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 15A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 15A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 19A,
VGS = 10V, RGEN = 4.7
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 48V, ID = 34A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 15A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 34A .
g.Full package VSD test condition IS = 34A .
h.L = 0.19mH, IAS = 42A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
Min
60
2
Typ
19
40
1320
310
40
16
3
36
4
28.7
6.3
9.7
Max Units
25
100
-100
V
µA
nA
nA
4V
25 m
S
pF
pF
pF
32 ns
6 ns
72 ns
8 ns
38.1 nC
nC
nC
34 A
1.3 V
4
2


Part Number CEU6060N
Description N-Channel MOSFET
Maker CET
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CEU6060N Datasheet PDF






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