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CET

CEU6030L Datasheet Preview

CEU6030L Datasheet

N-Channel MOSFET

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CED6030L/CEU6030L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 40A, RDS(ON) = 15.5m@VGS = 10V.
RDS(ON) = 22m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
30
±20
40
120
50
0.3
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V
V
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3
50
Units
C/W
C/W
1998.March
6 - 78
http://www.cetsemi.com




CET

CEU6030L Datasheet Preview

CEU6030L Datasheet

N-Channel MOSFET

No Preview Available !

CED6030L/CEU6030L
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 18A
Forwand Transconductance
Dynamic Characteristics c
gFS VDS = 10V, ID = 26A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 40A,
VGS = 10V, RGEN = 24
Turn-On Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 24V, ID = 40A,
VGS = 5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage bbbb
IS
VSD
VGS = 0V, IS = 26A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
30
1
Typ
1.6
12
18.5
32
1315
525
110
10
190
55
130
19
5
9
0.9
Max Units
1
100
-100
V
µA
nA
nA
3V
15.5 m
22 m
S
pF
pF
pF
16 ns
250 ns
90 ns
200 ns
23 nC
nC
nC
40 A
1.3 V
6
6 - 79


Part Number CEU6030L
Description N-Channel MOSFET
Maker CET
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