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CEU51A3 Datasheet Preview

CEU51A3 Datasheet

N-Channel MOSFET

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CED51A3/CEU51A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 35A, RDS(ON) = 14m(typ) @VGS = 10V.
RDS(ON) = 21m(typ) @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
30
±20
35
140
50
0.33
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
2004.October
6 - 70
http://www.cetsemi.com




CET

CEU51A3 Datasheet Preview

CEU51A3 Datasheet

N-Channel MOSFET

No Preview Available !

CED51A3/CEU51A3
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10 V, ID = 17.5A
VGS = 4.5V, ID = 17.5A
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 15 V, ID = 17.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD =15V , ID = 17.5A,
VGS = 4.5V, RGEN = 4.7
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 24V, ID = 35A,
VGS = 5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 35A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
30
1
Typ Max Units
1
100
-100
V
µA
nA
nA
3V
14 18 m
21 28 m
16 S
1510
280
125
pF
pF
pF
20 50 ns
7 21 ns
30 60 ns
8 24 ns
14 17 nC
3.7 nC
5 nC
35 A
1.3 V
6
6 - 71


Part Number CEU51A3
Description N-Channel MOSFET
Maker CET
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