CED4301/CEU4301
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -32V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
VGS(th)
RDS(on)
gFS b
Ciss
Coss
Crss
VGS = VDS, ID = -250µA
VGS = -10V, ID = -12A
VGS = -4.5V, ID = -8A
VDS = -5V, ID = -4.8A
VDS = -20V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -20V, ID = -5A,
VGS = -10V, RGEN = 3Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -20V, ID = -5A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-40
-1
Typ
32
50
12
1125
150
100
12
5
33
4
20
2.5
3.5
Max Units
-1
100
-100
V
µA
nA
nA
-3 V
42 mΩ
65 mΩ
S
pF
pF
pF
24 ns
30 ns
66 ns
8 ns
26 nC
nC
nC
-20 A
-1.3 V
5
2
