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CEU4269A - Dual-Channel MOSFET

Key Features

  • 40V , 8A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -8A , RDS(ON) = 48mΩ @VGS = 10V. RDS(ON) = 78mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). G1 High power and current handing capability. Lead free product is acquired. TO-252-4L package. S1 G1 S2 G2 D1/D2 CEU SERIES TO-252-4L D1/D2 G2 S1 S2.

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Datasheet Details

Part number CEU4269A
Manufacturer CET
File Size 139.92 KB
Description Dual-Channel MOSFET
Datasheet download datasheet CEU4269A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEU4269A Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 40V , 8A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -8A , RDS(ON) = 48mΩ @VGS = 10V. RDS(ON) = 78mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). G1 High power and current handing capability. Lead free product is acquired. TO-252-4L package. S1 G1 S2 G2 D1/D2 CEU SERIES TO-252-4L D1/D2 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous e Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS 40 40 VGS ±20 ±20 ID e 8 -8 IDM 32 -32 10.4 PD 0.