CED4204/CEU4204
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 32V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
40
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
1
3V
24 30 mΩ
34 45 mΩ
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS b
Ciss
Coss
Crss
VDS = 5V, ID = 6A
VDS = 20V, VGS = 0V,
f = 1.0 MHz
10
1050
155
95
S
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 20V, ID = 6A,
VGS = 10V, RGEN = 3Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 20V, ID = 6A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
14 30
10 20
17 35
18 35
20.5 27
3.5
4.0
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 1A
24 A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
6
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