CEU4060A - N-Channel MOSFET

CET

Key Features

60V, 15A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S.

CEU4060A n-channel mosfet by CET - Datasheet Preview

Datasheet Details

Part number	CEU4060A
Manufacturer	CET
File Size	121.92 KB
Description	N-Channel MOSFET
Datasheet	CEU4060A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CED4060A/CEU4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 60 Units V V A A W W/ C C ±20 15 45 50 0.