900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CET

CEU3172 Datasheet Preview

CEU3172 Datasheet

N-Channel MOSFET

No Preview Available !

CED3172/CEU3172
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 36A, RDS(ON) = 20m@VGS = 10V.
RDS(ON) = 28m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
30
±20
36
140
42
0.33
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V
V
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3
50
Units
C/W
C/W
Specification and data are subject to change without notice .
1
Rev 1. 2006.April
http://www.cetsemi.com




CET

CEU3172 Datasheet Preview

CEU3172 Datasheet

N-Channel MOSFET

No Preview Available !

CED3172/CEU3172
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
VGS = VDS, ID = 250µA
VGS = 10V, ID = 9.5A
VGS = 4.5V, ID = 8.0A
1
3V
16 20 m
22 28 m
VDS = 5V, ID = 9.5A
VDS = 15V, VGS = 0V,
f = 1.0 MHz
5
1080
220
140
S
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 9.5A,
VGS = 5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
16 30
9 20
31 60
10 20
10.4 13
3.5
3.8
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 2.3A
36 A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
6
2


Part Number CEU3172
Description N-Channel MOSFET
Maker CET
PDF Download

CEU3172 Datasheet PDF






Similar Datasheet

1 CEU3172 N-Channel MOSFET
CET





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy