30V, 51A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S.
Full PDF Text Transcription for CEU3100 (Reference)
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CED3100/CEU3100 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 51A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V. Super high dense...
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DS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 51 204 46 0.
CEU3100 Datasheet
