• Part: CEU3100
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: CET
  • Size: 406.02 KB
Download CEU3100 Datasheet PDF
CET
CEU3100
FEATURES 30V, 51A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM ±20 51 204 46 0.36 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.7 50 Units V V A A W W/ C C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . Rev 1. 2011.Sep http://.cetsemi. CED3100/CEU3100 Electrica...