CED2303/CEU2303
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
-30
-1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = -250µA
VGS = -10V, ID = -4.5A
VGS = -4.5V, ID = -2.7A
VDS = -10V, ID = -4.5A
-1
-3 V
200 mΩ
320 mΩ
5S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = -15V, VGS = 0V,
f = 1.0 MHz
230
90
20
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -15V, ID = -4.5A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
10 20 ns
10 20 ns
20 35 ns
6 20 ns
6 10 nC
0.8 nC
1.5 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = -4.5A
-9 A
-1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
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