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CED2303/CEU2303
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -9A, RDS(ON) = 200mΩ @VGS = -10V. RDS(ON) = 320mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D PRELIMINARY
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30
Units V V A A W W/ C C
±20
-9 -27 33 0.
CEU2303 Datasheet
