CEU2182 - N-Channel MOSFET

CET

Key Features

20V, 42A, RDS(ON) = 18mΩ @VGS = 4.5V. RDS(ON) = 25mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G D G S CEU SERIES TO-252(D-PAK) G D S CED SERIES TO-251(I-PAK) S.

CEU2182 n-channel mosfet by CET - Datasheet Preview

Datasheet Details

Part number	CEU2182
Manufacturer	CET
File Size	137.49 KB
Description	N-Channel MOSFET
Datasheet	CEU2182 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
CEU220J	Disc Ceramic Capacitors	Mallory
CEU221J	Disc Ceramic Capacitors	Mallory
CEU25N15L	N-Channel MOSFET	Chino-Excel Technology
CEU271J	Disc Ceramic Capacitors	Mallory
CEU01N65	N-Channel MOSFET	Chino-Excel Technology

Other Datasheets by CET

Part Number	Description
CEU21A2	N-Channel MOSFET
CEU21A3	N-Channel MOSFET
CEU20N06	N-Channel MOSFET
CEU20P06	P-Channel MOSFET
CEU20P10	P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

CED2182/CEU2182 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 42A, RDS(ON) = 18mΩ @VGS = 4.5V. RDS(ON) = 25mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G D G S CEU SERIES TO-252(D-PAK) G D S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20 Units V V A A W W/ C C ±12 42 170 50 0.