• Part: CEU20P06
  • Description: P-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: CET
  • Size: 139.69 KB
Download CEU20P06 Datasheet PDF
CET
CEU20P06
FEATURES -60V, -13A, RDS(ON) = 105mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) S CED SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -60 Units V V A A W W/ C C ±20 -13 -40 42 0.29 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.5 50 Units C/W C/W 2004.June 6 - 34 http://.cetsemi. CED20P06/CEU20P06 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate...