• Part: CEU16N10
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: CET
  • Size: 254.03 KB
Download CEU16N10 Datasheet PDF
CET
CEU16N10
FEATURES 100V, 13.3A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM ±20 13.3 53 43 0.34 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.5 50 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice . Rev 2. 2013.Mar http://.cet-mos. CED16N10/CEU16N10 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test...