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CEU14G04 Datasheet Preview

CEU14G04 Datasheet

N-Channel MOSFET

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CED14G04/CEU14G04
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
40V, 125A, RDS(ON) = 3.8m@VGS = 10V.
RDS(ON) = 6.8m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
40
±20
125
500
83
0.55
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.8
62.5
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2011.July
http://www.cetsemi.com




CET

CEU14G04 Datasheet Preview

CEU14G04 Datasheet

N-Channel MOSFET

No Preview Available !

CED14G04/CEU14G04
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 40A
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 20V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
td(on)
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 20V, ID = 20A,
VGS= 10V, RGEN= 1.6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 20V, ID = 20A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 50A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
40
1
Typ Max Units
1
100
-100
V
µA
nA
nA
3V
3.1 3.8 m
4.7 6.8 m
3730
570
360
pF
pF
pF
21 42 ns
12 24 ns
83 166 ns
19 38 ns
50 65 nC
10 nC
24 nC
50 A
1.2 V
2


Part Number CEU14G04
Description N-Channel MOSFET
Maker CET
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