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CET

CEU12N10 Datasheet Preview

CEU12N10 Datasheet

N-Channel MOSFET

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CED12N10/CEU12N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 11A, RDS(ON) = 180m@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
100
±20
11
44
43
0.29
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3.5
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
2005.August
http://www.cetsemi.com
1




CET

CEU12N10 Datasheet Preview

CEU12N10 Datasheet

N-Channel MOSFET

No Preview Available !

CED12N10/CEU12N10
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
VGS = 0V, ID = 250µA
VDS = 100, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
100
1
100
-100
V
µA
nA
nA
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
VDS = 10V, ID = 6A
2
4V
150 180 m
5S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
290
90
pF
pF
Crss 37 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 80, ID = 11A,
VGS = 10V, RGEN = 9.1
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 80V, ID = 11A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
9 18 ns
7 14 ns
18 35 ns
9 18 ns
12 16 nC
3.3 nC
5.3 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 11A
11 A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
4
2


Part Number CEU12N10
Description N-Channel MOSFET
Maker CET
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CEU12N10 Datasheet PDF






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