CED12N10/CEU12N10
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
VGS = 0V, ID = 250µA
VDS = 100, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
100
1
100
-100
V
µA
nA
nA
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
VDS = 10V, ID = 6A
2
4V
150 180 mΩ
5S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
290
90
pF
pF
Crss 37 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 80, ID = 11A,
VGS = 10V, RGEN = 9.1Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 80V, ID = 11A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
9 18 ns
7 14 ns
18 35 ns
9 18 ns
12 16 nC
3.3 nC
5.3 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 11A
11 A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
4
2
