CED11P20/CEU11P20
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -200V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -5.2A
Dynamic Characteristics d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
td(on)
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = -100V, ID = -13.5A,
VGS = -10V, RGEN = 25Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS = -160V, ID = -13.5A,
VGS = -10V
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -10.5A
Min
-200
-2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.L = 3mH, IAS =10.5A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C
Typ
0.30
1620
240
50
28
74
260
120
52
9
25
Max
-1
100
-100
-4
0.36
56
148
520
240
68
-10.5
-1.2
Units
V
µA
nA
nA
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
5
2
