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CED1185/CEU1185
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
800V, 3.4A, RDS(ON) = 2.9 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
800
±30
3.4 13.6 83
0.7
Single Pulsed Avalanche Energy d
EAS 331
Single Pulsed Avalanche Current d
IAS 4.
CEU1185 Datasheet
