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CED08N6A/CEU08N6A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
600V, 6.2A, RDS(ON) = 1.25Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 600
VGS ±30
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
ID
6.2 4.4
Drain Current-Pulsed a
IDM 24.8
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
107 0.7
Single Pulsed Avalanche Energy e
EAS 192
Single Pulsed Avalanche Current e
IAS 6.
CEU08N6A Datasheet
