• Part: CEU08N6A
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: CET
  • Size: 395.47 KB
Download CEU08N6A Datasheet PDF
CET
CEU08N6A
CEU08N6A is N-Channel MOSFET manufactured by CET.
FEATURES 600V, 6.2A, RDS(ON) = 1.25Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; Ro HS pliant. TO-251 & TO-252 package. CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 600 VGS ±30 Drain Current-Continuous @ TC = 25 C @ TC = 100 C 6.2 4.4 Drain Current-Pulsed a IDM 24.8 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C 107 0.7 Single Pulsed Avalanche Energy e EAS 192 Single Pulsed Avalanche Current e IAS 6.2 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.4 50 Units V V A A A W W/ C m J A C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice...