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CEU08N6A Datasheet Preview

CEU08N6A Datasheet

N-Channel MOSFET

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CED08N6A/CEU08N6A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
600V, 6.2A, RDS(ON) = 1.25@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 600
VGS ±30
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
ID
6.2
4.4
Drain Current-Pulsed a
IDM 24.8
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
107
0.7
Single Pulsed Avalanche Energy e
EAS 192
Single Pulsed Avalanche Current e
IAS 6.2
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.4
50
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Feb
http://www.cetsemi.com




CET

CEU08N6A Datasheet Preview

CEU08N6A Datasheet

N-Channel MOSFET

No Preview Available !

CED08N6A/CEU08N6A
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 3.1A
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 6A,
VGS = 10V,RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 6A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 6.2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Device Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.L = 10mH, IAS =6.2A, VDD = 50V, RG = 25, Starting TJ = 25 C.
Min
600
2
Typ
1.05
1280
120
11
23
8
55
8
21
5
5
Max Units
1
100
-100
V
µA
nA
nA
4V
1.25
pF
pF
pF
46 ns
16 ns
110 ns
6 ns
27 nC
nC
nC
6.2 A
1.5 V
2


Part Number CEU08N6A
Description N-Channel MOSFET
Maker CET
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