Datasheet4U Logo Datasheet4U.com

CEU04N65 - N-Channel MOSFET

Key Features

  • 650V, 3.2A, RDS(ON) = 2.8Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

📥 Download Datasheet

Datasheet Details

Part number CEU04N65
Manufacturer CET
File Size 378.22 KB
Description N-Channel MOSFET
Datasheet download datasheet CEU04N65 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CEU04N7G N-Channel MOSFET Chino-Excel Technology
CEU01N65 N-Channel MOSFET Chino-Excel Technology
CEU01N65A N-Channel MOSFET Chino-Excel Technology
CEU01N6G N-Channel MOSFET Chino-Excel Technology
CEU01N7 N-Channel MOSFET Chino-Excel Technology

Other Datasheets by CET

Part Number Description
CEU04N6 N-Channel MOSFET
CEU01N6 N-Channel MOSFET
CEU02N6 N-Channel MOSFET
CEU02N65A N-Channel MOSFET
CEU02N65D N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CED04N65/CEU04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 3.2A, RDS(ON) = 2.8Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 650 ±30 3.2 2 12.8 70 0.56 Single Pulsed Avalanche Energy d EAS 220 Single Pulsed Avalanche Current d IAS 4.