• Part: CEU04N6
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: CET
  • Size: 373.15 KB
Download CEU04N6 Datasheet PDF
CET
CEU04N6
CEU04N6 is N-Channel MOSFET manufactured by CET.
FEATURES 600V, 3.4A, RDS(ON) = 2.4Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; Ro HS pliant. TO-251 & TO-252 package. CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit VDS 600 VGS ±30 3.4 2.2 IDM 13.6 70 PD 0.56 EAS 242 IAS 4.4 TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.8 50 Units V V A A A W W/ C m J A...