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CEU02N7G-1 - N-Channel MOSFET

Key Features

  • 720V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. 750V@Tc=150 C Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S.

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Datasheet Details

Part number CEU02N7G-1
Manufacturer CET
File Size 594.56 KB
Description N-Channel MOSFET
Datasheet download datasheet CEU02N7G-1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CED02N7G-1/CEU02N7G-1 N-Channel Enhancement Mode Field Effect Transistor FEATURES 720V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. 750V@Tc=150 C Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Symbol VDS VGS ID IDM PD EAS IAS Limit 720 750 ±30 1.6 1.1 6.4 48 0.38 11.25 1.