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CED02N6/CEU02N6
Dec. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 1.9A , RDS(ON)=5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package.
D
6
G
D G S
G D S
CEU SERIES TO-252AA(D-PAK)
CED SERIES TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous (Tc=25 C) -Continuous (Tc=100 C) -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID ID IDM IS PD TJ, TSTG Limit 600 Unit V V A A A A W W/ C C
Ć 30
1.9 1.2 6 6 43 0.
CEU02N6 Datasheet
