900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CET

CEU02N6 Datasheet Preview

CEU02N6 Datasheet

N-Channel MOSFET

No Preview Available !

CED02N6/CEU02N6
Dec. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 1.9A , RDS(ON)=5@VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-251 & TO-252 package.
D
G
S
CEU SERIES
TO-252AA(D-PAK)
G
DS
CED SERIES
TO-251(l-PAK)
G
D
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Drain Current-Continuous (Tc=25 C)
-Continuous (Tc=100 C)
-Pulsed
Drain-Source Diode Forward Current
VGS
ID
ID
IDM
IS
Maximum Power Dissipation @Tc=25 C
Derate above 25 C
Operating and Storage Temperautre Range
PD
TJ, TSTG
Limit
600
Ć30
1.9
1.2
6
6
43
0.34
-55 to 150
Unit
V
V
A
A
A
A
W
W/ C
C
6
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RįJC
RįJA
2.9
50
C/W
C/W
6-77




CET

CEU02N6 Datasheet Preview

CEU02N6 Datasheet

N-Channel MOSFET

No Preview Available !

CED02N6/CEU02N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Symbol
a
DRAIN-SOURCE AVALANCHE RATING
Condition
Min Typ Max Unit
Single Pulse Drain-Source
6 Avalanche Energy
Maximum Drain-Source
Avalanche Current
EAS
VDD =50V, L=60mH
RG=9.1
IAS
125 mJ
2A
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS VGS = 0V,ID = 250µA 600
IDSS VDS = 600V, VGS = 0V
V
25 µA
Gate-Body Leakage
ON CHARACTERISTICSa
IGSS VGS = Ć30V, VDS = 0V
Ć100 nA
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA 2
4V
Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 1A
3.8 5.0
On-State Drain Current
ID(ON)
Forward Transconductance
gFS
SWITCHING CHARACTERISTICSb
Turn-On Delay Time
tD(ON)
Rise Time
tr
Turn-Off Delay Time
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VGS = 10V, VDS = 10V
VDS = 50V, ID = 1A
VDD = 300V,
ID = 2A,
VGS = 10V
RGEN=18
VDS =480V, ID = 2A,
VGS =10V
6-78
2
1.2
A
S
18 35 ns
18 35 ns
50 90 ns
16 40 ns
20 25 nC
2 nC
12 nC


Part Number CEU02N6
Description N-Channel MOSFET
Maker CET
PDF Download

CEU02N6 Datasheet PDF






Similar Datasheet

1 CEU02N6 N-Channel MOSFET
CET
2 CEU02N65A N-Channel MOSFET
CET
3 CEU02N65D N-Channel MOSFET
CET
4 CEU02N65G N-Channel MOSFET
CET
5 CEU02N6A N-Channel MOSFET
CET
6 CEU02N6G N-Channel MOSFET
Chino-Excel Technology
7 CEU02N7 N-Channel MOSFET
CET
8 CEU02N7G N-Channel MOSFET
Chino-Excel Technology
9 CEU02N7G-1 N-Channel MOSFET
CET





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy