CED02N6/CEU02N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Symbol
a
DRAIN-SOURCE AVALANCHE RATING
Condition
Min Typ Max Unit
Single Pulse Drain-Source
6 Avalanche Energy
Maximum Drain-Source
Avalanche Current
EAS
VDD =50V, L=60mH
RG=9.1Ω
IAS
125 mJ
2A
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS VGS = 0V,ID = 250µA 600
IDSS VDS = 600V, VGS = 0V
V
25 µA
Gate-Body Leakage
ON CHARACTERISTICSa
IGSS VGS = Ć30V, VDS = 0V
Ć100 nA
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA 2
4V
Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 1A
3.8 5.0 Ω
On-State Drain Current
ID(ON)
Forward Transconductance
gFS
SWITCHING CHARACTERISTICSb
Turn-On Delay Time
tD(ON)
Rise Time
tr
Turn-Off Delay Time
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VGS = 10V, VDS = 10V
VDS = 50V, ID = 1A
VDD = 300V,
ID = 2A,
VGS = 10V
RGEN=18Ω
VDS =480V, ID = 2A,
VGS =10V
6-78
2
1.2
A
S
18 35 ns
18 35 ns
50 90 ns
16 40 ns
20 25 nC
2 nC
12 nC
