Datasheet Summary
N-Channel Enhancement Mode Field Effect Transistor
Features
150V, 2A, RDS(ON) = 440mΩ @VGS = 10V. RDS(ON) = 580mΩ @VGS = 6V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS pliant. SOT-223 package.
DS...