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CET

CET0215 Datasheet Preview

CET0215 Datasheet

N-Channel MOSFET

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CET0215
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
150V, 2A, RDS(ON) = 440m@VGS = 10V.
RDS(ON) = 580m@VGS = 6V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead-free plating ; RoHS compliant.
SOT-223 package.
D
DS
D
G
SOT-223
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 150
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 2
IDM 8
Maximum Power Dissipation
PD 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
42
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 2. 2011.Nov
http://www.cet-mos.com




CET

CET0215 Datasheet Preview

CET0215 Datasheet

N-Channel MOSFET

No Preview Available !

CET0215
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 150V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
150
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 1.0A
2
4V
360 440 m
Dynamic Characteristics d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
385
85
pF
pF
Crss 25 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 50V, ID = 1A,
VGS = 10V, RGEN = 22
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 80V, ID = 1.8A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
11 22 ns
3 6 ns
33 66 ns
6 12 ns
9.2 12 nC
1.5 nC
2.7 nC
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1.85A
1.85 A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2


Part Number CET0215
Description N-Channel MOSFET
Maker CET
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