650V, 0.3A, RDS(ON) = 15Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-223 package. D
DS D
G
SOT-223
G
S.
Full PDF Text Transcription for CET01N65A (Reference)
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CET01N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 0.3A, RDS(ON) = 15Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). ...
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) = 15Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-223 package. D DS D G SOT-223 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 650 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 0.3 IDM 1.2 Maximum Power Dissipation PD 3 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units V V A A W C Units C/W This is preliminary information on a new product in
CET01N65A Datasheet
