CEP630N transistor equivalent, n-channel enhancement mode field effect transistor.
Type CEP630N CEB630N CEF630N
VDSS 200V 200V
200V
RDS(ON) 0.36Ω 0.36Ω
0.36Ω
ID @VGS 9A 10V 9A 10V 9A d 10V
Super high dense cell design for extremely low RDS(ON). Hig.
Image gallery
TAGS
Manufacturer
Related datasheet