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CEP02N7 - N-Channel MOSFET

Features

  • Type CEP02N7 CEB02N7 CEI02N7 CEF02N7 VDSS 700V 700V 700V 700V RDS(ON) 6.6Ω 6.6Ω 6.6Ω 6.6Ω ID 1.9A 1.9A 1.9A 1.9A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. D G G D S CEI SERIES TO-262(I2-PAK) S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEP02N7
Manufacturer CET
File Size 126.75 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP02N7 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEP02N7/CEB02N7 CEI02N7/CEF02N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N7 CEB02N7 CEI02N7 CEF02N7 VDSS 700V 700V 700V 700V RDS(ON) 6.6Ω 6.6Ω 6.6Ω 6.6Ω ID 1.9A 1.9A 1.9A 1.9A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
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