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CEP02N65D - N-Channel MOSFET

Features

  • Type CEP02N65D CEB02N65D CEF02N65D VDSS 650V 650V 650V RDS(ON) 6.9Ω 6.9Ω 6.9Ω ID @VGS 2A 10V 2A 10V 2A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEP02N65D
Manufacturer CET
File Size 342.04 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP02N65D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEP02N65D/CEB02N65D CEF02N65D N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP02N65D CEB02N65D CEF02N65D VDSS 650V 650V 650V RDS(ON) 6.9Ω 6.9Ω 6.9Ω ID @VGS 2A 10V 2A 10V 2A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 650 ±30 2 8 41 0.33 2d 8d 27 0.
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