The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CEN7002A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 0.25A, RDS(ON) = 3 Ω @VGS = 10V. RDS(ON) = 4 Ω @VGS = 4.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23-T package.
D
CEN7002A SOT-23-T
Die upside up package.
DS G
SOT-23-T
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 60
VGS ±20
ID 0.25 IDM 1.3
Maximum Power Dissipation
PD 0.35
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units V V A A
W
C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 350
Units C/W
2004.December
7 - 30
http://www.cetsemi.
CEN7002A Datasheet
