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CEM6405
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-60V, -5.7A, RDS(ON) = 48mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -60
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -5.7 IDM -22.8
Maximum Power Dissipation
PD 2.
CEM6405 Datasheet
